
May 19, 1998 (Version 2.1)
21
XQ4028EX CLB RAM Synchronous (Edge-Triggered) Write Operation Guidelines
Testing of switching parameters is modeled after testing methods specified by MIL-M-38510/605. All devices are 100% functionally tested.
Internal timing parameters are derived from measuring internal test patterns. Listed below are representative values. For more specific, more
precise, and worst-case guaranteed data, use the values reported by the static timing analyzer (TRCE in the Xilinx Development System) and
back-annotated to the simulation netlist. All timing parameters assume worst-case operating conditions (supply voltage and junction
temperature). Values apply to all XQ4000EX devices unless otherwise noted.
Note 1: Timing for the 16x1 RAM option is identical to 16x2 RAM timing.
Note 2: Applicable Read timing specifications are identical to Level-Sensitive Read timing.
Global Set/Reset
Minimum GSR Pulse Width
Delay from GSR input to any Q (XQ4028EX)
Delay from GSR input to any Q (XQ4036EX)
Toggle Frequency )
(for export control purposes)
T
MRW
T
MRQ
T
MRQ
F
TOG
13.0
22.8
24.0
143
ns
ns
ns
MHz
Single Port RAM
Speed Grade
-4
Units
Size
Symbol
Min
Max
Write Operation
Address write cycle time (clock K period)
16x2
32x1
T
WCS
T
WCTS
11.0
11.0
ns
ns
Clock K pulse width (active edge)
16x2
32x1
T
WPS
T
WPTS
T
ASS
T
ASTS
5.5
5.5
ns
ns
Address setup time before clock K
16x2
32x1
2.7
2.6
ns
ns
Address hold time after clock K
16x2
32x1
T
AHS
T
AHTS
0
0
ns
ns
DIN setup time before clock K
16x2
32x1
T
DSS
T
DSTS
2.4
2.9
ns
ns
DIN hold time after clock K
16x2
32x1
T
DHS
T
DHTS
0
0
ns
ns
WE setup time before clock K
16x2
32x1
T
WSS
T
WSTS
2.3
2.1
ns
ns
WE hold time after clock K
16x2
32x1
T
WHS
T
WHTS
0
0
ns
ns
Data valid after clock K
16x2
32x1
T
WOS
T
WOTS
8.2
10.1
ns
ns
Speed Grade
-4
Units
Description
Symbol
Min
Max