參數(shù)資料
型號(hào)： XQ4005E
廠商： Xilinx, Inc.
英文描述： High-Reliability Field Programmable Gate Arrays(高可靠性現(xiàn)場(chǎng)可編程門陣列)
中文描述： 高可靠性的現(xiàn)場(chǎng)可編程門陣列（高可靠性現(xiàn)場(chǎng)可編程門陣列）
文件頁(yè)數(shù)： 17/34頁(yè)
文件大小： 529K
代理商： XQ4005E
May 19, 1998 (Version 2.1)
17
XQ4028EX Switching Characteristics
Definition of Terms
In the following tables, some specifications may be designated as Advance or Preliminary. These terms are defined as
follows:
Advance:
Initial estimates based on simulation and/or extrapolation from other speed grades, devices, or device families.
Values are subject to change. Use as estimates, not for production.
Preliminary:
Based on preliminary characterization. Further changes are not expected.
Unmarked:
Specifications not identified as either Advance or Preliminary are to be considered Final.
All specifications subject to change without notice.
XQ4028EX Absolute Maximum Ratings
Note 1: Maximum DC overshoot or undershoot above V
cc
or below GND must be limited to either 0.5 V or 10 mA, whichever is easier to
achieve. During transitions, the device pins may undershoot to -2.0 V or overshoot to Vcc + 2.0 V, provided this over- or undershoot
lasts less than 20 ns.
Note 2: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress rat-
ings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is
not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device reliability.
XQ4028EX Recommended Operating Conditions
Note 1: At junction temperatures above those listed as Operating Conditions, all delay parameters increase by 0.35% per
°
C.
Note 2: Input and output measurement thresholds for TTL are 1.5 V. Input and output measurement thresholds for CMOS are 2.5 V.
Note 3: All timing parameters are specified for Commercial temperature range only.
Symbol
V
CC
V
IN
V
TS
V
CCt
T
STG
T
SOL
Description
Value
-0.5 to +7.0
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
50
-65 to +150
+260
+150
+125
Units
V
V
V
ms
°
C
°
C
°
C
°
C
Supply voltage relative to GND
Input voltage relative to GND (Note 1)
Voltage applied to 3-state output (Note 1)
Longest Supply Voltage Rise Time from 1 V to 4 V
Storage temperature (ambient)
Maximum soldering temperature (10 s @ 1/16 in. = 1.5 mm)
Junction temperature
T
J
Ceramic packages
Plastic packages
Symbol
Description
Min
Max
Units
V
CC
Supply voltage relative to GND, T
C
= -55
°
C to +125
°
C
Supply voltage relative to GND, T
J
= -55
°
C to +125
°
C
High-level input voltage
Ceramic Packages
4.5
5.5
V
Plastic Packages
4.5
5.5
V
V
IH
TTL inputs
2.0
V
CC
100%
V
CMOS inputs
70%
V
CC
V
V
IL
Low-level input voltage
TTL inputs
0
0.8
CMOS inputs
0
20%
V
CC
ns
T
IN
Input signal transition time
250
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