參數(shù)資料
型號(hào)： V62C5181024LL-70P
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
中文描述： 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 18/43頁(yè)
文件大?。?/td> 1155K
代理商： V62C5181024LL-70P
K4S643232C
CMOS SDRAM
REV. 1.1 Nov. '99
- 18
*Note :
1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only another bank precharge of four banks operation.
4. For -55/60/70/80/10, tRDL=1CLK product can be supported within restricted amounts and it will be distinguished by bucket code "NV"
. From the next generation, tRDL will be only 2CLK for every clock frequency.
5. Write Interrupted by Precharge & DQM
D
0
D
1
D
2
CLK
CMD
DQM
DQ
Masked by DQM
WR
PRE
D
3
Note 3,4
Note 2
6. Precharge
D
0
D
1
D
2
CLK
CMD
DQ
WR
PRE
D
3
1) Normal Write (BL=4)
tRDL
Note 1,4
2) Normal Read (BL=4)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
PRE
Q
0
Q
1
Q
2
Q
3
Q
0
Q
1
Q
2
Q
3
1
2
*Note :
1. t
RDL
: Last data in to row precharge delay
2. Number of valid output data after row precharge : 1, 2 for CAS Latency = 2, 3 respectively.
3. The row active command of the precharge bank can be issued after t
RP
from this point.
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
4. For -55/60/70/80/10, tRDL=1CLK product can be supported within restricted amounts and it will be distinguished by bucket code "NV"
. From the next generation, tRDL will be only 2CLK for every clock frequency
7. Auto Precharge
D
0
D
1
D
2
CLK
CMD
DQ
WR
D
3
1) Normal Write (BL=4)
Note 3,4
Auto Precharge Starts
2) Normal Read (BL=4)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
D
0
D
1
D
2
D
3
D
0
D
1
D
2
D
3
Note 3
Auto Precharge Starts
Note 2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V62C5181024LL-70PI 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128K X 8 STATIC RAM
V62C5181024LL-70T 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128K X 8 STATIC RAM
V62C5181024LL-70TI 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128K X 8 STATIC RAM
V62C5181024LL70W 制造商:MOST 功能描述:
V62C5181024LL-70W 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128K X 8 STATIC RAM
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