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參數(shù)資料
| 型號： | ST52T301P |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8-Bit OTP/EPROM DuaLogic] MCUs WITH ADC, UART, TIMER, TRIAC & PWM DRIVER |
| 中文描述： | 8位檢察官辦公室/存儲器DuaLogic]與藝術(shù)發(fā)展局和UART，定時器，可控硅控制器 |
| 文件頁數(shù)： | 21/100頁 |
| 文件大?。?/td> | 497K |
| 代理商： | ST52T301P |
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3 EPROM
The EPROM memory provides an on-chip
user-programmable non-volatile memory, that
allows fast and reliable storageof userdata.
There are 16K bits of memory space with an 8-bit
internal parallelism (2Kbytes) addressed by an
11-bit bus.The data bus is of 8 bits.
The memory has a doublesupply:V
PP
is equal to
12V
±
5% in Programming Phase and 5V
±
10%
duringWorking Phase.V
DD
is equalto 5V
±
10%.
The EPROM memory of ST52x301 is divided in
three main blocks (seeFigure 3.1):
Mbfs Setting with (0 through 191) contains the
coordinatesof thevertexesof every Mbf defined
in the program.
Interrupt Vectors (192 through 201) contain the
addressesfor the interrupt routines.
Each address is composed of two bytes.
Program Instruction Set (202 through 2048)
containsthe instructionset of the user program.
It can be composedof moreBooleanand Fuzzy
Algorithms
The operation that can be performed, during
Programming Phase, on the EPROMare: Writing,
Verify,Writing Inhibit, Standbyand Erasing.
Figure 3.2 shows the signals timing in
ProgrammingMode.
0
192
191
202
201
2048
Mbfs Setting
InterruptVectors
Program
InstructionsSet
Boolean Algorithm
Boolean Algorithm
Fuzzy Algorithm
Fuzzy Algorithm
· · ·· · ·
INT_EXT
INT_TRIAC
INT_TIMER
INT_SCI
INT_ADC
Mbf Parameters
Figure3.1.Memory Map
3.1 EPROM ProgrammingPhase Procedure
Programming mode is selected by applying
12V
±
5%voltageto the V
PP
pin and set the control
signal as following:
RESET:0, TEST:0, MODE:1.
CADD, ERES, OE and CE are the control signals
used during the Programming Mode. CADD is
activeon edge,the othersare active on level (OE,
CE are active low,ERES is active high).
3.1.1EPROMWriting
When the memory is blank,all the bits are at logic
level”1”.The data areintroducedby programming
only the zeros in the desired memory location;
however all input data must contain both ”1” and
”0”.
Theonly wayto change ”0” into ”1” is to erase the
whole memory ( by exposure to Ultra Violet light)
and reprogramit.
The memory is in Writing mode when:
CE = LOW
OE= HIGH
withstable data on the data bus P(0:7).
The total programming pulse width (CE = 0 V) is,
typically,50
μ
s (bymeansof 5pulsesof 10
μ
s), but
beforeactivatingsuchpulse,it is suggestedto wait
for at least 2
μ
s after V
PP
rises at 12 V .After the
disactivationof the pulse it is suggestedto wait for
21/99
ST52T301/E301
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