參數(shù)資料
型號(hào): SST65P542R
廠商: Silicon Storage Technology, Inc.
英文描述: MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.01ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
中文描述: 遙控器控制器
文件頁(yè)數(shù): 30/40頁(yè)
文件大小: 538K
代理商: SST65P542R
30
Advance Information
Remote Controller MCU
SST65P542R
2001 Silicon Storage Technology, Inc.
S71170-03-000
12/01 368
11.4 DC Electrical Characteristics
TABLE
11-3: DC E
LECTRICAL
C
HARACTERISTICS
(T
A
= 0°C
TO
+70°C, V
DD
= 2.2-3.2V, V
SS
= 0V)
Symbol
I
DD1
Parameter
Min
Max
Typ
Unit
1. Test conditions for I
DD
are 8 MHz and 20 pf loading.
2. Idle current I
DD
is 0.4 mA typical, 0.6 mA maximum at 4 MHz, 2.2V, and 20 pf loading.
Supply Current
Run without Flash Erase/Program Operation
Run with Flash Erase/Program Operation
Idle
2
Stop
25°
0°to +70°
I/O Ports Hi-Z Leakage current
Port A, Port B, Port C
Input Current
IRQL, RESETL, LPRSTL, OSC1
Port B with Strong Pull-ups Enable (V
IN
= 0.2xV
DD
)
Port B with Strong Pull-ups Enabled (V
IN
= 0.8xV
DD
)
Port B with Weak Pull-ups Enable (V
IN
= 0.2xV
DD
)
Port B with Weak Pull-ups Enabled (V
IN
= 0.8xV
DD
)
Output Voltage
(I
LOAD
= 1 mA) OSC2
(I
LOAD
= -500 μA) OSC2
Output High Voltage
(I
LOAD
= -1.2 mA) Port A, Port B
(I
LOAD
= -6 mA) IRO
(I
LOAD
= -4 mA) Port C
Output Low Voltage
(I
LOAD
= 1.8 mA) Port A, Port B
(I
LOAD
= 12 mA) IRO
(I
LOAD
= 8 mA) Port C
Input High Voltage
Port A, Port B, Port C, OSC1
IRQL, RESETL, LPRSTL
Input Low Voltage
Port A, Port B, Port C, OSC1
IRQL, RESETL, LPRSTL
-
-
8
20
2.75
2.5
10
0.8
mA
mA
mA
6
4
9
μA
μA
15
I
OZ
-2
2
-
μA
I
IN
-1
-34
-15
-17
-7.5
1
-
μA
-74
-36
-37
-18
-50
-25
-25
-12.5
V
OL
V
OH
V
OH
-
0.4
-
-
-
μA
V
DD
-0.4
V
DD
-0.4
V
DD
-0.8
V
DD
-0.5
V
DD
-0.3
V
DD
-0.3
V
DD
-0.3
V
V
OL
0.4
0.8
0.5
0.2
0.3
0.3
V
V
IH
0.8 V
DD
0.8 V
DD
V
DD
V
DD
-
-
V
V
IL
V
SS
V
SS
0.2 V
DD
0.2 V
DD
-
-
V
T11-3.3 368
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