- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄192306 > S71PL191HB0BFI100 (SPANSION LLC) SPECIALTY MEMORY CIRCUIT, PBGA73 PDF資料下載
參數(shù)資料
| 型號： | S71PL191HB0BFI100 |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 9 X 13 MM, LEAD FREE, FBGA-73 |
| 文件頁數(shù)： | 133/172頁 |
| 文件大?。?/td> | 4662K |
| 代理商： | S71PL191HB0BFI100 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁當前第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁第161頁第162頁第163頁第164頁第165頁第166頁第167頁第168頁第169頁第170頁第171頁第172頁
May 7, 2004 S29PL127H_129H_00A1
S29PL127H/S29PL129H
47
Pre l i m i n a r y
cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program data to a bank faster
than using the standard program command sequence. The unlock bypass com-
mand sequence is initiated by first writing two unlock cycles. This is followed by
a third write cycle containing the unlock bypass command, 20h. That bank then
enters the unlock bypass mode. A two-cycle unlock bypass program command
sequence is all that is required to program in this mode. The first cycle in this se-
quence contains the unlock bypass program command, A0h; the second cycle
contains the program address and data. Additional data is programmed in the
same manner. This mode dispenses with the initial two unlock cycles required in
the standard program command sequence, resulting in faster total programming
time. Table 16 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock By-
pass Reset commands are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. (See Table 14)
The device offers accelerated program operations through the WP#/ACC pin.
When the system asserts VHH on the WP#/ACC pin, the device automatically en-
ters the Unlock Bypass mode. The system may then write the two-cycle Unlock
Bypass program command sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not
be at VHH any operation other than accelerated programming, or device damage
may result. In addition, the WP#/ACC pin must not be left floating or uncon-
nected; inconsistent behavior of the device may result.
and Program Operations table in the AC Characteristics section for parameters,
and Figure 16 for timing diagrams.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S71VS128RC0ZHK203 | SPECIALTY MEMORY CIRCUIT, PBGA56 |
| S71VS128RC0ZHK2L2 | SPECIALTY MEMORY CIRCUIT, PBGA56 |
| S71WS512ND0BAWEH | SPECIALTY MEMORY CIRCUIT, PBGA84 |
| S72NS512PE0AHGL02 | SPECIALTY MEMORY CIRCUIT, PBGA133 |
| S7911 | PIN PHOTO DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71PL254 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71PL254J | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71PL254J04BAW0Z0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
| S71PL254J04BAW0Z2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
| S71PL254J04BAW0Z3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。