參數(shù)資料
型號: PF38F3050L0YUQ3A
廠商: INTEL CORP
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA88
封裝: 8 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SCSP-88
文件頁數(shù): 32/70頁
文件大小: 1193K
代理商: PF38F3050L0YUQ3A
768-Mbit LQ Family with Synchronous PSRAM
Intel StrataFlash Wireless Memory (L18 SCSP)
Datasheet
August 2006
38
Order Number: 314476-001
768-Mbit LQ Family with Synchronous PSRAM
8.2
PSRAM Asynchronous Write
The figures and tables below shows the PSRAM AC characteristics. All timing
parameters are measured with the default output drive strength (half drive strength).
Figure 16. PSRAM Asynchronous Control Register Read
tO H Z
tH Z
tB H Z
tO E
tL Z
tB L Z
tO L Z
tC P H
tB A
tC P H
tC O
tA A D V
tCRE S
tR C
tA A
A [19:18]
A [M AX:2 0 ,17 :0 ]
CRE
AD V#
CE #
OE #
WE #
U B #/LB #
D Q [15:0]
Table 16. PSRAM AC Characteristics—Asynchronous Write (Sheet 1 of 2)
Symbol
Parameter
85 ns PSRAM
70 ns PSRAM
Units Notes
Min
Max
Min
Max
tWC
Write Cycle Time
85
70
ns
tAS
Address Setup Time
0
0
ns
t
AW
Address Valid to End of Write
85
70
ns
tWR
Write Recovery
0
0
ns
tCSL
CE# Pulse Width Low Time
10
4
s
t
CW
CE# to End of Write
85
70
ns
tVPH
ADV# Pulse Width High
7
10
ns
2
tVP
ADV# Pulse Width Low
6
10
ns
2
t
AVH
Address Hold from ADV# High
5
5
ns
2
tAVS
Address Setup to ADV# High
10
10
ns
2
tCVS
CE# Low to ADV# High
10
ns
2
t
VS
ADV# Setup to End of Write
85
70
ns
tBW
UB#, LB# Setup to End of Write
85
70
ns
tWP
WE# Pulse Width Low
45
46
ns
1
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