參數(shù)資料
型號: PF38F3050L0YUQ3A
廠商: INTEL CORP
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA88
封裝: 8 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SCSP-88
文件頁數(shù): 26/70頁
文件大?。?/td> 1193K
代理商: PF38F3050L0YUQ3A
768-Mbit LQ Family with Synchronous PSRAM
Intel StrataFlash Wireless Memory (L18 SCSP)
Datasheet
August 2006
32
Order Number: 314476-001
768-Mbit LQ Family with Synchronous PSRAM
unnecessary current flow.
Note: On-chip temperature sensor is used for temperature-compensated self-refresh, therefore the standby
current values at 70, 45 and 15 °C are for reference only.
6.3
Device AC Test Conditions
Notes:
1.
Test configuration component value for worst case speed conditions.
2.
CL includes jig capacitance.
6.3.1
Flash Die Capacitance
Note: Sampled, not 100% tested. T
C
= 25 °C, f = 1 MHz.
Table 12. PSRAM Partial-Array Self-Refresh (Typical) Current
Density Active Array
Typical Standby Current (μA)
85 oC
70 oC45 oC15 oC
32-Mbit
Full
70
65
50
45
1/2
60
55
45
40
1/4
55
50
40
35
1/8
50
45
40
35
0
40
35
30
25
64-Mbit
Full
120
105
85
70
1/2
115
TBD
70
1/4
110
TBD
70
1/8
105
TBD
70
0
70
Figure 11. Device Transient Equivalent Testing Load Circuit
I/O
Output
Z
O = 5 0 O h m s
C
L =
30pf
50
Ohm s
V
CCQ/2
Table 13. L18 Individual Die Capacitance
Symbol
Parameter
Min Max Unit
Condition
CIN
Input Capacitance
(Address, CLK, F-CE#, F-OE#, ADV#, WE#, F-WP#)
68
pF
VIN = 0.0 V to 1.8 V
COUT
Output Capacitance (Data and WAIT)
8
10
pF VOUT = 0.0 V to 1.8 V
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