參數(shù)資料
型號: PF38F3050L0YUQ3A
廠商: INTEL CORP
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA88
封裝: 8 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SCSP-88
文件頁數(shù): 22/70頁
文件大?。?/td> 1193K
代理商: PF38F3050L0YUQ3A
Intel StrataFlash Wireless Memory (L18 SCSP)
August 2006
Datasheet
Order Number: 314476-001
29
768-Mbit LQ Family with Synchronous PSRAM
5.0
Maximum Ratings and Operating Conditions
5.1
Device Absolute Maximum Ratings
Warning:
Stressing the device beyond the Absolute Maximum Ratings may cause permanent
damage. These are stress ratings only.
5.2
Device Operating Conditions
Warning:
Operation beyond the Operating Conditions is not recommended and extended
exposure may affect device reliability.
Note: In typical operation, the F-VPP program voltage is V
PPL
. F-VPP can be connected to 8.5 V - 9.5 V for a
maximum of 80 cumulative hours or 1000 cycles on the main array blocks.
Table 9.
Device Absolute Maximum Ratings
Parameter
Min
Max
Unit
Notes
Device Case Temperature Under Bias
–25
+85
°C
Storage Temperature
–55
+125
°C
Voltage On Any Signal
(Except for F-VCC, F-VPP, P-VCC, VCCQ, and S-VCC)
–0.2
2.25
V
1,3
F-V
CC
Voltage
–0.2
+2.45
V
1,2
VCCQ, P-VCC, and Optional S-VCC Voltage
–0.2
+2.45
V
1,3
F-VPP Voltage
–0.2
+10.0
V
1,4
I
SH
(Output Short Circuit Current)
+50
mA
5
Notes:
1.
Voltage is referenced to VSS.
2.
During power transitions, minimum DC voltage may undershoot to –2.0 V for periods < 20 ns;
maximum DC voltage may overshoot to VCC (operating max) + 2.0 V for periods < 20 ns.
3.
During power transitions, minimum DC voltage may undershoot to –1.0 V for periods < 20 ns;
maximum DC voltage may overshoot to V
CCQ
(operating max) + 1.0 V for periods < 20 ns.
4.
During power transitions, minimum DC voltage may undershoot to –2.0 V for periods < 20 ns;
maximum DC voltage may overshoot to VPPH (operating max) + 2.0 V for periods < 20 ns.
5.
Output shorted for no more than one second. No more than one output shorted at a time.
Table 10. Device Operating Conditions
Symbol
Parameter
Test
Condition
Flash + xRAM
Unit
Min
Max
T
C
Device Case Operating Temperature
–25
+85
°C
F-V
CC
Flash Supply Voltage
+1.7
+2.0
V
CCQ,
P-V
CC
, S-V
CC
Flash and PSRAM I/O Voltage
PSRAM and SRAM Supply Voltage
+1.7
+1.95
V
PPL
F-VPP (Flash Programming Voltage
Supply, Logic Level)
—–0.9
+2.0
V
PPH
F-VPP (Flash Factory Word
Programming Voltage Supply)
—+8.5
+9.5
V
Block Erase Cycles Flash Main Array and EFA Blocks
V
PP =
V
CC
100,000
Cycles
VPP = V
PPH
—1000
Cycles
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