參數(shù)資料
型號(hào)： MT47H64M16HR-3IT
元件分類： DRAM
英文描述： 64M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84
文件頁數(shù)： 57/129頁
文件大?。?/td> 9252K
代理商： MT47H64M16HR-3IT
Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
VDDQ = +1.5–1.9V, VDD = +1.5–1.9V
AC Characteristics
-25E
-25
-3E
-3
-37E
Units
Notes
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Refresh
REFRESH-to-
ACTIVATE or
to
-REFRESH in-
terval
256Mb
tRFC
75
–
75
–
75
–
75
–
75
–
ns
512Mb
105
–
105
–
105
–
105
–
105
–
1Gb
127.5
–
127.5
–
127.5
–
127.5
–
127.5
–
2Gb
197.5
–
197.5
–
197.5
–
197.5
–
197.5
–
Average periodic
refresh (commercial)
tREFI
–
7.8
–
7.8
–
7.8
–
7.8
–
7.8
s
Average periodic
refresh (industrial)
tREFIIT
–
3.9
–
3.9
–
3.9
–
3.9
–
3.9
s
Average periodic re-
fresh (automotive)
tREFIAT
–
3.9
–
3.9
–
3.9
–
3.9
–
3.9
s
CKE LOW to CK, CK# un-
certainty
tDELAY
MIN limit = tIS + tCK + tIH
MAX limit = n/a
ns
Self
Refresh
Exit SELF REFRESH to
nonREAD command
tXSNR
MIN limit = tRFC (MIN) + 10
MAX limit = n/a
ns
Exit SELF REFRESH to
READ command
tXSRD
MIN limit = 200
MAX limit = n/a
tCK
Exit SELF REFRESH tim-
ing reference
tISXR
MIN limit = tIS
MAX limit = n/a
ps
Power-Down
Exit active
power-down
to READ
command
MR12 = 0
tXARD
2
–
2
–
2
–
2
–
2
–
tCK
MR12 = 1
8 - AL
–
8 - AL
–
7 - AL
–
7 - AL
–
6 - AL
–
tCK
Exit precharge
power-down to any non-
READ command
tXP
2
–
2
–
2
–
2
–
2
–
tCK
CKE MIN HIGH/LOW
time
tCKE
MIN = 3
MAX =
n/a
tCK
1Gb:
x4,
x8,
x16
1.55V
DDR2
SDRAM
AC
Timing
Operating
Specifications
PDF:
09005aef82b91d01
1GbDDR2_1_55V.PDF
Rev.
A
5/09
EN
33
Micron
Technology,
Inc.
reserves
the
right
to
change
products
or
specifications
without
notice.
2009
Micron
Technology,
Inc.
All
rights
reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT47H64M16HR-3L 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
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