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Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MbDDR2_2.fm - Rev. H 7/05 EN
15
2004, 2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR2 SDRAM
General Description
D9,F1,F3,F7,
F9,H9,K1,K3,
K7,K9
D9,H9,K1,
K3,K7,K9
VDDQ
Supply DQ Power Supply: 1.8V ±0.1V. Isolated on the device for improved
noise immunity.
M2
VREF
Supply SSTL_18 reference voltage.
D3,H3,M3,T1,
U9
D3,H3,M3,T1,
U9
VSS
Supply Ground.
M7
VSSDL
Supply DLL Ground. Isolated on the device from VSS and VSSQ.
D7,E2,E8,G2,
G8,H7, J2,J8,
L2,L8
D7,H7,J2,
J8,L2,L8
VSSQ
Supply DQ Ground. Isolated on the device for improved noise immunity.
A1,A2,A8,A9
D2,H2,V8,
AA1,AA2,AA8,
AA9
A1,A2,A8,A9,
D2,D8,E1-E3,
E7-E9,F1-F3,
F7-F9, G1-G3,
G7-G9,
AA1,AA2,AA8,
AA9
NC
–
No Connect: These pins should be left unconnected.
–
J1, J9, L1, L9,
H2,
NF
–
No Function: These pins are used as DQ4–DQ7 on the 64 Meg x 8,
but are NF (No Function) on the 128 Meg x 4 configuration.
D8, H8
–
NU
–
Not Used: Not used only on x16. If EMR[E10] = 0, D8 and H8 are
UDQS# and LDQS#.
If EMR[E10] = 1, then D8 and H8 are not used.
–
H2, H8
NU
–
Not Used: Not used only on x8. If EMR[E10] = 0, H2 and H8 are
RDQS# and DQS#.
If EMR[E10] = 1, then H2 and H8 are not used.
V3, V7, P1
RFU
–
Reserved for Future Use: row address bits A14(V3) and A15(V7) are
reserved for 2Gb and 4Gb densities. BA2 (P1) reserved for 1Gb
device.
Table 3:
FBGA 92-Ball Descriptions 128 Meg x 4, 64 Meg x 8, 32 Meg x 16
x16 FBGA
Ball
Assignment
x4, x8 FBGA
Ball
Assignment
Symbol
Type
Description