參數(shù)資料
型號(hào): MT46V128M4FN-75E:C
元件分類: DRAM
英文描述: 128M X 4 DDR DRAM, 0.75 ns, PBGA60
封裝: 10 X 12.50 MM, FBGA-60
文件頁數(shù): 68/94頁
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
70
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications
Table 29:
Input Slew Rate Derating Values for Addresses and Commands
Notes: 14; notes appear on page 71–76; 0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Speed
Slew Rate
tIS
tIH
Units
-75/-75Z/-75E
0.500V / ns
1.00
1
ns
-75/-75Z/-75E
0.400V / ns
1.05
1
ns
-75/-75Z/-75E
0.300V / ns
1.15
1
ns
Table 30:
Input Slew Rate Derating Values for DQ, DQS, and DM
Notes: 31; notes appear on page 71-76; 0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Speed
Slew Rate
tDS
tDH
Units
-75/-75Z/-75E
0.500V / ns
0.50
ns
-75/-75Z/-75E
0.400V / ns
0.55
ns
-75/-75Z/-75E
0.300V / ns
0.60
ns
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