參數(shù)資料
型號(hào): MT46V128M4FN-75E:C
元件分類: DRAM
英文描述: 128M X 4 DDR DRAM, 0.75 ns, PBGA60
封裝: 10 X 12.50 MM, FBGA-60
文件頁數(shù): 60/94頁
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
63
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications
Table 25:
IDD Test Cycle Times
Values reflect number of clock cycles for each test
IDD Test
Speed
Grade
Clock Cycle
Time
tRRD
tRCD
tRAS
tRP
tRC
tRFC
tREFI
CL
IDD0
-75/75Z
7.5ns
NA
6
3
9
NA
-75E
7.5ns
NA
6
2
8
NA
-6/-6T
6ns
NA
7
3
10
NA
-5B
5ns
NA
8
3
11
NA
IDD1
-75
7.5ns
NA
6
3
9
NA
2.5
-75Z
7.5ns
NA
6
3
9
NA
2
-75E
7.5ns
NA
6
2
8
NA
2
-6/-6T
6ns
NA
7
3
10
NA
2.5
-5B
5ns
NA
3
IDD4R
-75
7.5ns
NA
2.5
-75Z
7.5ns
NA
2
-75E
7.5ns
NA
2
-6/-6T
6ns
NA
2.5
-5B
5ns
NA
3
IDD4W
-75
7.5ns
NA
-75Z
7.5ns
NA
-75E
7.5ns
NA
-6/-6T
6ns
NA
-5B
5ns
NA
IDD5
-75/75Z
7.5ns
NA
10
NA
-75E
7.5ns
NA
9
NA
-6/-6T
6ns
NA
12
NA
-5B
5ns
NA
14
NA
IDD5A
-75/75Z
7.5ns
NA
10
1,029
NA
-75E
7.5ns
NA
10
1,029
NA
-6/-6T
6ns
NA
12
1,288
NA
-5B
5ns
NA
14
1,546
NA
IDD7
-75
7.5ns
2/4
3
NA
3
10
NA
2.5
-75Z
7.5ns
2/4
3
NA
3
10
NA
2
-75E
7.5ns
2
3
NA
2
8
NA
2
-6/-6T
6ns
2/4
3
NA
3
10
NA
2.5
-5B
5ns
2/4
3
NA
3
11
NA
3
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