參數(shù)資料
型號： MT46V128M4FN-75E:C
元件分類： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PBGA60
封裝： 10 X 12.50 MM, FBGA-60
文件頁數(shù)： 51/94頁
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
55
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications
Table 14:
DC Electrical Characteristics and Operating Conditions (-5B DDR400)
Notes: 1–5, and 16;nNotes appear on page 71-76; 0°C
≤ T
A ≤ +70°C; VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V
Parameter/Condition
Symbol
Min
Max
Units
Notes
Supply voltage
VDD
2.5
2.7
V
I/O supply voltage
VDDQ
2.5
2.7
V
I/O reference voltage
VREF
0.49 × VDDQ
0.51 × VDDQV
I/O termination voltage (system)
VTT
VREF - 0.04
VREF + 0.04
Input high (logic 1) voltage
VIH(DC)VREF + 0.15
VDD + 0.3
Input low (logic 0) voltage
VIL(DC)
-0.3
VREF - 0.15
Input Leakage Current
Any input 0V
≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.35V
(All other pins not under test = 0V)
II
-2
2
A
Output Leakage Current
(DQs are disabled; 0V
≤ VOUT ≤ VDDQ)
IOZ
-5
5
A
Output Levels: Full drive option - x4, x8, x16
High current (VOUT = VDDQ - 0.373V, minimum VREF,
minimum VTT)
IOH
-16.8
-
mA
Low current (VOUT = 0.373V, maximum VREF,
maximum VTT)
IOL
16.8
-
mA
Output Levels: Full drive option - x4, x8, x16
High current (VOUT = VDDQ - 0.373V, minimum VREF,
minimum VTT)
IOHR
-9
-
mA
Low current (VOUT = 0.763V, maximum VREF,
maximum VTT)
IOLR
9-
mA
Table 15:
AC Input Operating Conditions
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V (VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V for DDR400)
Notes: 1–5, 14, 16; notes appear on page 71–76
Parameter/Condition
Symbol
Min
Max
Units
Notes
Input high (logic 1) voltage
VIH(AC)VREF + 0.310
–
V
Input low (logic 0) voltage
VIL(AC)
-
VREF - 0.310
V
I/O reference voltage
VREF(AC)
0.49 × VDDQ
0.51 × VDDQ
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