參數(shù)資料
型號(hào)： MT46V128M4FN-75E:C
元件分類： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PBGA60
封裝： 10 X 12.50 MM, FBGA-60
文件頁(yè)數(shù)： 32/94頁(yè)
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
38
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Operations
Figure 22:
Consecutive WRITE-to-WRITE
Notes: 1. DI b, etc. = data-in for column b, etc.
2. Three subsequent elements of data-in are applied in the programmed order following
DI b.
3. Three subsequent elements of data-in are applied in the programmed order following
DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
CK
CK#
COMMAND
WRITE
NOP
WRITE
NOP
ADDRESS
Bank,
Col b
NOP
Bank,
Col n
T0
T1
T2
T3
T2n
T4
T5
T4n
T3n
T1n
DQ
DQS
DM
DI
n
DI
b
DON’T CARE
TRANSITIONING DATA
tDQSS
tDQSS (NOM)
相關(guān)PDF資料
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MT46V128M4P-75L:C 128M X 4 DDR DRAM, 0.75 ns, PDSO66
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