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| 型號(hào)： | MT46HC32M16LFCX-75:B |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 7.5 ns, PBGA90 |
| 封裝： | 9 X 13 MM, GREEN, PLASTIC, VFBGA-90 |
| 文件頁(yè)數(shù)： | 25/98頁(yè) |
| 文件大?。?/td> | 3258K |
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Table 13: Target Output Drive Characteristics (Three-Quarter Strength)
Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions
Voltage (V)
Pull-Down Current (mA)
Pull-Up Current (mA)
Min
Max
Min
Max
0.00
0.10
1.96
12.97
–1.96
–12.97
0.20
3.92
18.76
–3.92
–18.76
0.30
5.88
22.96
–5.88
–22.96
0.40
7.84
25.94
–7.84
–25.94
0.50
9.80
28.00
–9.80
–28.00
0.60
11.76
29.75
–11.76
–29.75
0.70
13.72
31.20
–13.72
–31.20
0.80
15.68
32.55
–15.68
–32.55
0.85
16.66
33.24
–16.66
–33.24
0.90
16.66
33.95
–16.66
–33.95
0.95
16.66
34.58
–16.66
–34.58
1.00
16.66
35.04
–16.66
–35.04
1.10
16.66
35.95
–16.66
–35.95
1.20
16.66
36.86
–16.66
–36.86
1.30
16.66
37.77
–16.66
–37.77
1.40
16.66
38.68
–16.66
–38.68
1.50
16.66
39.59
–16.66
–39.59
1.60
16.66
40.50
–16.66
–40.50
1.70
16.66
41.41
–16.66
–41.41
1.80
–
42.32
–
–42.32
1.90
–
43.23
–
–43.23
Notes: 1. Based on nominal impedance of
37Ω (three-quarter drive strength) at VDDQ/2.
2. The full variation in driver current from minimum to maximum, due to process, voltage,
and temperature, will lie within the outer bounding lines of the I-V curves.
3. Contact factory for availability of three-quarter drive strength.
512Mb: x16, x32 Mobile LPDDR SDRAM
Output Drive Characteristics
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
31
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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