參數(shù)資料
型號(hào)： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 79/82頁(yè)
文件大?。?/td> 1100K
代理商： M58WR064EBZB
80/82
Table 43. Command Interface States - Lock Table, Next Output
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, P/E. C. = Program/Erase Controller.
2. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.
3. If the P/E.C. is active, both cycles are ignored.
4. Illegal commands are those not defined in the command set.
Current CI State
Next Output State After Command Input
Lock/CR
Setup(3)
OTP Setup
(3)
Block Lock
Confirm
Block
Lock-Down
Confirm
Set CR
Confirm
EFP Exit,
Quad EFP
Exit (2)
Illegal
Command
(4)
P/E. C.
Operation
Completed
Program Setup
Status Register
Output
Unchanged
Erase Setup
OTP Setup
Program in Erase
Suspend
EFP Setup
EFP Busy
EFP Verify
Quad EFP Setup
Quad EFP Busy
Lock/CR Setup
Status Register
Array
Status Register
Output
Unchanged
Lock/CR Setup in
Erase Suspend
OTP Busy
Status Register
Output Unchanged
Array
Output
Unchanged
Output
Unchanged
Ready
Status Register
Output Unchanged
Array
Output
Unchanged
Output
Unchanged
Program Busy
EraseBusy
Program/Erase
Program in Erase
Suspend Busy
Program in Erase
Suspend
Suspended
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參數(shù)描述
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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