參數(shù)資料
型號(hào)： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 36/82頁(yè)
文件大?。?/td> 1100K
代理商： M58WR064EBZB
41/82
Table 20. Asynchronous Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Symbol
Alt
Parameter
VDDQ = 1.65V-2.2V
VDDQ = 2.2V-3.3V
Unit
70
80
100
70
80
100
Re
ad
Ti
mings
tAVAV
tRC
Address Valid to Next Address Valid
Min
70
80
100
70
80
100
ns
tAVQV
tACC
Address Valid to Output Valid
(Random)
Max
70
80
100
70
80
100
ns
tAVQV1
tPAGE
Address Valid to Output Valid
(Page)
Max
20
25
ns
tAXQX
(1)
tOH
Address Transition to Output
Transition
Min
000000
ns
tELTV
Chip Enable Low to Wait Valid
Max
14
18
20
22
ns
tELQV
(2)
tCE
Chip Enable Low to Output Valid
Max
70
80
100
70
80
100
ns
tELQX
(1)
tLZ
Chip Enable Low to Output
Transition
Min
000000
ns
tEHTZ
Chip Enable High to Wait Hi-Z
Max
17
20
25
ns
tEHQX
(1)
tOH
Chip Enable High to Output
Transition
Min
000000
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output Hi-Z
Max
17
20
ns
tGLQV
(2)
tOE
Output Enable Low to Output Valid
Max
20
25
30
ns
tGLQX
(1)
tOLZ
Output Enable Low to Output
Transition
Min
000000
ns
tGHQX
(1)
tOH
Output Enable High to Output
Transition
Min
000000
ns
tGHQZ
(1)
tDF
Output Enable High to Output Hi-Z
Max
17
20
17
20
ns
L
atch
Timin
gs
tAVLH
tAVADVH Address Valid to Latch Enable High
Min
9
10
12
ns
tELLH
tELADVH
Chip Enable Low to Latch Enable
High
Min
10
12
ns
tLHAX
tADVHAX
Latch Enable High to Address
Transition
Min
9
10
9
10
ns
tLLLH
tADVLAD
VH
Latch Enable Pulse Width
Min
9
10
12
ns
tLLQV
tADVLQV
Latch Enable Low to Output Valid
(Random)
Max
70
80
100
70
80
100
ns
tLHGL
tADVHGL
Latch Enable High to Output Enable
Low
Min
000000
ns
相關(guān)PDF資料
PDF描述
M58WR128EBZB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M5913 COMBINED SINGLE CHIP PCM CODEC AND FILTER
M5913B1 COMBINED SINGLE CHIP PCM CODEC AND FILTER
M5F78M05 5 V FIXED POSITIVE REGULATOR, PSFM3
M5F78M06 6 V FIXED POSITIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ETZB 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*