參數(shù)資料
型號: M58WR064EBZB
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的× 16,多銀行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 17/82頁
文件大?。?/td> 1100K
代理商: M58WR064EBZB
24/82
Table 8. Status Register Bits
Note: Logic level ’1’ is High, ’0’ is Low.
Bit
Name
Type
Logic Level
Definition
SR7
P/E.C. Status
Status
’1’
Ready
’0’
Busy
SR6
Erase Suspend Status
Status
’1’
Erase Suspended
’0’
Erase In progress or Completed
SR5
Erase Status
Error
’1’
Erase Error
’0’
Erase Success
SR4
Program Status
Error
’1’
Program Error
’0’
Program Success
SR3
VPP Status
Error
’1’
VPP Invalid, Abort
’0’
VPP OK
SR2
Program Suspend Status Status
’1’
Program Suspended
’0’
Program In Progress or Completed
SR1
Block Protection Status
Error
’1’
Program/Erase on protected Block, Abort
’0’
No operation to protected blocks
SR0
Bank Write Status
Status
’0’
SR7 = ‘0’
Program or erase operation in addressed bank
SR7 = ‘1’
No Program or erase operation in the device
'1'
SR7 = ‘0’
Program or erase operation in a bank other than
the addressed bank
SR7 = ‘1’
Not Allowed
Multiple Word Program
Status (Enhanced
Factory Program mode)
Status
'1'
SR7 = ‘0’
the device is NOT ready for the next word
SR7 = ‘1’
Not Allowed
'0'
SR7 = ‘0’
the device is ready for the next Word
SR7 = ‘1’
the device is exiting from EFP
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