- 您現在的位置：買賣IC網 > PDF目錄224150 > M58WR064EBZB (意法半導體) 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數資料
| 型號： | M58WR064EBZB |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數： | 76/82頁 |
| 文件大小： | 1100K |
| 代理商： | M58WR064EBZB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁當前第76頁第77頁第78頁第79頁第80頁第81頁第82頁
78/82
Table 41. Command Interface States - Modify Table, Next Output
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A
bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI Query mode, depending on the
command issued. Each bank remains in its last output state until a new command is issued. The next state does not depend on the
bank’s output state.
Current CI State
Next Output State After Command Input (6)
Read
Array(2)
Program
DWP,
QWP
Setup
(3,4)
Block
Erase,
Bank
Erase
Setup
(3,4)
EFP
Setup
Quad-
EFP
Setup
Erase
Confirm
P/E
Resume,
Block
Unlock
confirm,
EFP
Confirm
Program/
Erase
Suspend
Read
Status
Register
Clear status
Register
(5)
Read
Electronic
signature,
Read CFI
Query
Program Setup
Status Register
Erase Setup
OTP Setup
Program in
Erase Suspend
EFP Setup
EFP Busy
EFP Verify
Quad EFP Setup
Quad EFP Busy
Lock/CR Setup
Status Register
Lock/CR Setup
in Erase
Suspend
OTP Busy
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Status
Register
Ready
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Electronic
Signature/
CFI
Program Busy
Erase Busy
Program/Erase
Program in
Erase Suspend
Busy
Program in
Erase Suspend
Suspended
相關PDF資料 |
PDF描述 |
|---|---|
| M58WR128EBZB | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M5913 | COMBINED SINGLE CHIP PCM CODEC AND FILTER |
| M5913B1 | COMBINED SINGLE CHIP PCM CODEC AND FILTER |
| M5F78M05 | 5 V FIXED POSITIVE REGULATOR, PSFM3 |
| M5F78M06 | 6 V FIXED POSITIVE REGULATOR, PSFM3 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M58WR064ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET70ZB6T | 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR064ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ETZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。