參數(shù)資料
型號： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 1/82頁
文件大?。?/td> 1100K
代理商： M58WR064EBZB
1/82
FEATURES SUMMARY
s
SUPPLY VOLTAGE
–VDD = 1.65V to 2.2V for Program, Erase and
Read
–VDDQ = 1.65V to 3.3V for I/O Buffers
–VPP = 12V for fast Program (optional)
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100 ns
s
PROGRAMMING TIME
– 8s by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
s
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
s
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s
COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR064ET: 8810h
– Bottom Device Code, M58WR064EB: 8811h
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ETZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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