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參數(shù)資料
| 型號： | M58WR064EBZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 25/82頁 |
| 文件大?。?/td> | 1100K |
| 代理商： | M58WR064EBZB |
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other modes, WAIT is always asserted (except for
Read Array mode).
See Table 21, Synchronous Read AC Character-
istics and Figure 12, Synchronous Burst Read AC
Waveform for details.
Single Synchronous Read Mode
Single Synchronous Read operations are similar
to Synchronous Burst Read operations except that
only the first data output after the X latency is valid.
Synchronous Single Reads are used to read the
Electronic Signature, Status Register, CFI, Block
Protection Status, Configuration Register Status
or Protection Register. When the addressed bank
is in Read CFI, Read Status Register or Read
Electronic Signature mode, the WAIT signal is al-
ways asserted.
See Table 21, Synchronous Read AC Character-
istics and Figure 13, Single Synchronous Read AC
Waveform for details.
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The
Multiple
Bank
Architecture
of
the
M58WR064E provides flexibility for software de-
velopers by allowing code and data to be split with
4Mbit granularity. The Dual Operations feature
simplifies the software management of the device
and allows code to be executed from one bank
while another bank is being programmed or
erased.
The Dual operations feature means that while pro-
gramming or erasing in one bank, Read opera-
tions are possible in another bank with zero
latency (only one bank at a time is allowed to be in
Program or Erase mode). If a Read operation is re-
quired in a bank which is programming or erasing,
the Program or Erase operation can be suspend-
ed. Also if the suspended operation was Erase
then a Program command can be issued to anoth-
er block, so the device can have one block in
Erase Suspend mode, one programming and oth-
er banks in Read mode. Bus Read operations are
allowed in another bank between setup and con-
firm cycles of program or erase operations. The
combination of these features means that read op-
erations are possible at any moment.
ble in other banks and in the same bank. For a
complete list of possible commands refer to Ap-
pendix D, Command Interface State Tables.
Table 11. Dual Operations Allowed In Other Banks
Table 12. Dual Operations Allowed In Same Bank
Note: 1. Not allowed in the Block or Word that is being erased or programmed.
2. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed.
Status of bank
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Programming
Yes
––
Yes
–
Erasing
Yes
–
Yes
–
Program Suspended
Yes
–
Yes
Erase Suspended
Yes
–
Yes
Status of bank
Commands allowed in same bank
Read
Array
Read
Status
Register
Read
CFI Query
Read
Electronic
Signature
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Programming
–(2)
Yes
–
Yes
–
Erasing
–(2)
Yes
–
Yes
–
Program Suspended
Yes(1)
Yes
–
Yes
Erase Suspended
Yes(1)
Yes
Yes(1)
––
Yes
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參數(shù)描述 |
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| M58WR064ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET70ZB6T | 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR064ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ETZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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