參數(shù)資料
型號： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 49/82頁
文件大小： 1100K
代理商： M58WR064EBZB
53/82
PART NUMBERING
Table 26. Ordering Information Scheme
Table 27. Daisy Chain Ordering Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc....) or for further information on any aspect of this de-
vice, please contact the ST Sales Office nearest to you.
Example:
M58WR064ET
70 ZB
6
T
Device Type
M58
Architecture
W = Multiple Bank, Burst Mode
Operating Voltage
R = VDD = 1.65V to 2.2V, VDDQ = 1.65V to 3.3V
Device Function
064ET = 64 Mbit (x16), Top Boot
064EB = 64 Mbit (x16), Bottom Boot
Speed
70 = 70ns
80 = 80ns
10 = 100ns
Package
ZB = VFBGA56:
7.7 x 9 mm, 0.75mm pitch
Temperature Range
6 = –40 to 85°C
Option
T = Tape & Reel packing
Example:
M58WR064E
-ZB
T
Device Type
M58WR064E
Daisy Chain
ZB = VFBGA56:
7.7x9 mm, 0.75 mm pitch
Option
T = Tape & Reel Packing
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ETZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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