參數(shù)資料
型號(hào)： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 44/82頁(yè)
文件大小： 1100K
代理商： M58WR064EBZB
49/82
Figure 17. Reset and Power-up AC Waveforms
Table 24. Reset and Power-up AC Characteristics
Note: 1. The device Reset is possible but not guaranteed if tPLPH < 50ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-Up or Reset.
Symbol
Parameter
Test Condition
70
80
100
Unit
tPLWL
tPLEL
tPLGL
tPLLL
Reset Low to
Write Enable Low,
Chip Enable Low,
Output Enable Low,
Latch Enable Low
During Program
Min
10
s
During Erase
Min
20
s
Other Conditions
Min
80
ns
tPHWL
tPHEL
tPHGL
tPHLL
Reset High to
Write Enable Low
Chip Enable Low
Output Enable Low
Latch Enable Low
Min
30
ns
tPLPH
(1,2)
RP Pulse Width
Min
50
ns
tVDHPH
(3)
Supply Voltages High to Reset
High
Min
50
s
AI06976
W,
RP
E, G,
VDD, VDDQ
tVDHPH
tPLPH
Power-Up
Reset
tPLWL
tPLEL
tPLGL
tPLLL
L
tPHWL
tPHEL
tPHGL
tPHLL
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