參數(shù)資料
型號： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 68/82頁
文件大?。?/td> 1100K
代理商： M58WR064EBZB
70/82
Figure 26. Erase Suspend & Resume Flowchart and Pseudo Code
Write 70h
AI06175
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR6 = 1
Erase Continues
Write D0h
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
Start
Write B0h
Erase Complete
Write FFh
Read Data
Write FFh
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another address*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
}
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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