參數(shù)資料
型號： K9F4G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述： 512M x 8位/ 1克× 8位NAND閃存
文件頁數(shù)： 9/41頁
文件大小： 1076K
代理商： K9F4G08U0M
FLASH MEMORY
9
Advance
K9F4G08U0M
K9K8G08U1M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: 1. V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=3.3V, T
A
=25
°
C. Not 100% tested.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Page Read with
Serial Access
I
CC
1
tRC=25ns
CE=V
IL,
I
OUT
=0mA
-
15
30
mA
Program
I
CC
2
-
Erase
I
CC
3
-
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±10
Input High Voltage
V
IH*
-
0.8xVcc
-
Vcc+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.2xVcc
Output High Voltage Level
V
OH
K9F4G08U0M :I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
K9F4G08U0M :I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F4G08U0M :V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F4G08U0M-XCB0
:
T
A
=0 to 70
°
C, K9F4G08U0M-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
V
IN/OUT
-0.6 to +4.6
V
V
CC/
V
CCQ
-0.6 to +4.6
Temperature Under Bias
K9F4G08U0M-XCB0
T
BIAS
-10 to +125
°
C
K9F4G08U0M-XIB0
-40 to +125
Storage Temperature
K9F4G08U0M-XCB0
T
STG
-65 to +150
°
C
K9F4G08U0M-XIB0
Short Circuit Current
I
OS
5
mA
相關PDF資料
PDF描述
K9K8G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
相關代理商/技術參數(shù)
參數(shù)描述
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K9F4G08U0M-PCB0T00 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays
K9F5608D0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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