參數(shù)資料
型號(hào)： K9F4G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述： 512M x 8位/ 1克× 8位NAND閃存
文件頁(yè)數(shù)： 14/41頁(yè)
文件大?。?/td> 1076K
代理商： K9F4G08U0M
FLASH MEMORY
14
Advance
K9F4G08U0M
K9K8G08U1M
NAND Flash Technical Notes
(Continued)
Program Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
Program Completed
Program Error
Yes
No
Yes
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read
Single Bit Failure
Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
相關(guān)PDF資料
PDF描述
K9K8G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F4G08U0M-PCB0 制造商:Samsung Semiconductor 功能描述:
K9F4G08U0M-PCB0000 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays
K9F4G08U0M-PCB0T00 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays
K9F5608D0C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-D 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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