- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374297 > K9F4G08U0M (SAMSUNG SEMICONDUCTOR CO. LTD.) 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | K9F4G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| 中文描述： | 512M x 8位/ 1克× 8位NAND閃存 |
| 文件頁數(shù)： | 31/41頁 |
| 文件大?。?/td> | 1076K |
| 代理商： | K9F4G08U0M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當(dāng)前第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁
FLASH MEMORY
31
Advance
K9F4G08U0M
K9K8G08U1M
Device Operation
PAGE READ
Read mode is initiated by writing 00h-30h to the command register along with five address cycles. In two consecutive read opera-
tions, the second one doesn’t need 00h command, which five address cycles and 30h command initiates that operation. Once the
command is latched, it does not need to be written for the following page read operation. Two types of operations are available : ran-
dom read out, serial page read out.
The random read mode is enabled when the page address is changed. The 2,112 bytes of data within the selected page are trans-
ferred to the data registers in less than 20
μ
s(t
R
). The system controller can detect the completion of this data transfer(tR) by analyzing
the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 25ns cycle time by sequen-
tially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the data starting from the selected col-
umn address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
Address(5Cycle)
00h
Col. Add.1,2 & Row Add.1,2,3
Data Output(Serial Access)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
RE
t
R
30h
I/Ox
≈
≈
≈
≈
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9F5608Q0C | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F4G08U0M-PCB0 | 制造商:Samsung Semiconductor 功能描述: |
| K9F4G08U0M-PCB0000 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F4G08U0M-PCB0T00 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F5608D0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608D0C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。