- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374297 > K9F4G08U0M (SAMSUNG SEMICONDUCTOR CO. LTD.) 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | K9F4G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| 中文描述： | 512M x 8位/ 1克× 8位NAND閃存 |
| 文件頁數(shù)： | 35/41頁 |
| 文件大?。?/td> | 1076K |
| 代理商： | K9F4G08U0M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁當(dāng)前第35頁第36頁第37頁第38頁第39頁第40頁第41頁
FLASH MEMORY
35
Advance
K9F4G08U0M
K9K8G08U1M
Figure 14. Two-Plane Page Program
80h
11h
Data
Input
Plane 0
(2048 Block)
Block 0
Block 2
Block 4094
Block 4092
80h
I/O
0
~
7
R/B
Address & Data Input
11h
81h
10h
t
DBSY
t
PROG
70h
Address & Data Input
NOTE
: It is noticeable that same row address except for A
18
is applied to the two blocks
81h
10h
Plane 1
(2048 Block)
Block 1
Block 3
Block 4095
Block 4093
Figure 15. Two-Plane Block Erase Operation
60h
I/O
X
R/B
60h
D0h
I/O
Pass
Fail
t
BERS
Address (3 Cycle)
Address (3 Cycle)
70h
"0"
"1"
A
12
~ A
17 :
Fixed ’Low’
A
18 :
Fixed ’Low’
A
19
29 :
Fixed ’Low’
A
12
~ A
17 :
Fixed ’Low’
A
18 :
Fixed ’High’
A
19
29 :
valid
Two-Plane Block Erase
Basic concept of Two-Plane Block Erase operation is identical to that of Two-Plane Page Program. Up to two blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command(60h) followed by
three address cycles) may be repeated up to twice for erasing up to two blocks. Only one block should be selected from each plane.
The Erase Confirm command(D0h) initiates the actual erasing process. The completion is detected by monitoring R/B pin or Ready/
Busy status bit (I/O 6).
A
0
~ A
11 :
Valid
A
12
~ A
17 :
Fixed ’Low’
A
18 :
Fixed ’Low’
A
19
~ A
29 :
Fixed ’Low’
A
0
~ A
11 :
Valid
A
12
~ A
17 :
Valid
A
18 :
Fixed ’High’
A
19
~ A
29 :
Valid
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9F5608Q0C | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F4G08U0M-PCB0 | 制造商:Samsung Semiconductor 功能描述: |
| K9F4G08U0M-PCB0000 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F4G08U0M-PCB0T00 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F5608D0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608D0C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。