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參數資料
| 型號： | K9F4G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| 中文描述： | 512M x 8位/ 1克× 8位NAND閃存 |
| 文件頁數： | 2/41頁 |
| 文件大?。?/td> | 1076K |
| 代理商： | K9F4G08U0M |
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FLASH MEMORY
2
Advance
K9F4G08U0M
K9K8G08U1M
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200
μ
s on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at
25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M
′
s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
Voltage Supply
- 2.70V ~ 3.60V
Organization
- Memory Cell Array : (512M + 16,384K)bit x 8bit
- Data Register : (2K + 64)bit x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 20
μ
s(Max.)
- Serial Access : 25ns(Min.)
512M x 8 Bit / 1G x 8 Bits NAND Flash Memory
Fast Write Cycle Time
- Page Program time : 200
μ
s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Driven Operation
Intelligent Copy-Back with internal 1bit/528Byte EDC
Unique ID for Copyright Protection
Package :
- K9F4G08U0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F4G08U0M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9K8G08U1M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F4G08U0M-Y,P
2.70 ~ 3.60V
X8
TSOP1
K9F4G08U0M-I
52ULGA
K9K8G08U1M-I
相關PDF資料 |
PDF描述 |
|---|---|
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9F5608Q0C | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C | 512Mb/256Mb 1.8V NAND Flash Errata |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9F4G08U0M-PCB0 | 制造商:Samsung Semiconductor 功能描述: |
| K9F4G08U0M-PCB0000 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F4G08U0M-PCB0T00 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F5608D0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608D0C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
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