參數(shù)資料
型號(hào)： K9F4G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述： 512M x 8位/ 1克× 8位NAND閃存
文件頁數(shù)： 15/41頁
文件大?。?/td> 1076K
代理商： K9F4G08U0M
FLASH MEMORY
15
Advance
K9F4G08U0M
K9K8G08U1M
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Write 30h
Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
～
Block A
Block B
(n-1)th
nth
(page)
{
1st
(n-1)th
nth
(page)
{
an error occurs.
1
2
相關(guān)PDF資料
PDF描述
K9K8G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F4G08U0M-PCB0 制造商:Samsung Semiconductor 功能描述:
K9F4G08U0M-PCB0000 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays
K9F4G08U0M-PCB0T00 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays
K9F5608D0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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