參數(shù)資料
型號(hào): K4N56163QF
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit gDDR2 SDRAM
中文描述: 片256Mbit GDDR2 SDRAM的
文件頁數(shù): 66/73頁
文件大?。?/td> 1262K
代理商: K4N56163QF
- 66 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
No Operation Command
The No Operation Command should be used in cases when the gDDR2 SDRAM is in an idle or a wait state. The purpose
of the No Operation Command (NOP) is to prevent the gDDR2 SDRAM from registering any unwanted commands
between operations. A No Operation Command is registered when CS is low with RAS, CAS, and WE held high at the ris-
ing edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as a
burst read or write cycle.
Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is
brought high at the rising edge of the clock, the RAS, CAS, and WE signals become don’t cares.
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