參數(shù)資料
型號: K4N56163QF
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit gDDR2 SDRAM
中文描述: 片256Mbit GDDR2 SDRAM的
文件頁數(shù): 61/73頁
文件大?。?/td> 1262K
代理商: K4N56163QF
- 61 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
CK
CMD
CKE
DQ
DQS
DQS
CMD
CKE
DQ
DQS
DQS
CMD
CKE
DQ
DQS
DQS
CMD
CKE
DQ
DQS
DQS
RDA
RDA
BL=8
PRE
PRE
AL + BL/2
with tRTP = 7.5ns
& tRAS min satisfied
AL + BL/2
with tRTP = 7.5ns
& tRAS min satisfied
Read to power down entry
Read with Autoprecharge to power down entry
CK
CK
CK
Start internal precharge
AL + CL
AL + CL
CKE should be kept high until the end of burst operation.
AL + CL
BL=4
CKE should be kept high
until the end of burst operation.
CKE should be kept high
until the end of burst operation.
AL + CL
T0
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
T1
T2
Tx+1
Tx+7
Tx+8
Tx+9
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
CKE should be kept high until the end of burst operation.
Q
Q
Q
Q
Q
Q
Q
Q
RD
BL=4
RD
BL=8
Read operation starts with a read command and
Q
Q
Q
Q
T0
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
T1
T2
Tx+1
Tx+7
Tx+8
Tx+9
T0
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
T1
T2
Tx+1
Tx+7
Tx+8
Tx+9
T0
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
T1
T2
Tx+1
Tx+7
Tx+8
Tx+9
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