型號: | K4J52324KI-HC1A0 |
元件分類: | DRAM |
英文描述: | 512M X 1 DDR DRAM, 0.2 ns, PBGA136 |
封裝: | HALOGEN FREE AND ROHS COMPLIANT, FBGA-136 |
文件頁數(shù): | 1/61頁 |
文件大?。?/td> | 1364K |
代理商: | K4J52324KI-HC1A0 |
相關(guān)PDF資料 |
PDF描述 |
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K4M64163PK-BE900 | 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
K507 | 2 ELEMENT, 2000 uH, GENERAL PURPOSE INDUCTOR |
K001 | 2 ELEMENT, 2000 uH, GENERAL PURPOSE INDUCTOR |
K004 | 2 ELEMENT, 500 uH, GENERAL PURPOSE INDUCTOR |
K5A22NAU | KEYPAD SWITCH, SPST, MOMENTARY, 0.1A, 50VDC, 2 N, SURFACE MOUNT-STRAIGHT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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K4J52324QC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit GDDR3 SDRAM |
K4J52324QC-AC20000 | 制造商:Samsung Semiconductor 功能描述:GDDR3 SDRAM X32 BOC - Trays |
K4J52324QC-BC14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit GDDR3 SDRAM |
K4J52324QC-BC14000 | 制造商:Samsung Semiconductor 功能描述:GDDR3 SDRAM X32 BOC LEAD PART 10W - Trays |
K4J52324QC-BC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit GDDR3 SDRAM |