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參數(shù)資料
| 型號(hào)： | IS42S16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT)Synchronous DRAM(512K x 16 x 2組同步動(dòng)態(tài)RAM) |
| 中文描述： | 為512k字× 16位× 2銀行（16兆），同步DRAM（為512k × 16 × 2組同步動(dòng)態(tài)RAM）的 |
| 文件頁數(shù)： | 5/79頁 |
| 文件大小： | 656K |
| 代理商： | IS42S16100 |
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IS42S16100
ISSI
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
09/29/00
5
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
0V
≤
V
IN
≤
V
CC
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
CC
I
OUT
=
–
2 mA
I
OUT
= +2 mA
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
–
5
5
μA
I
OL
Output Leakage Current
–
5
5
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
2.4
—
—
0.4
V
V
I
CC
1
Operating Current
(1,2)
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
CAS
latency = 3
-6
-7
-8
-10
—
—
—
—
—
—
—
—
-6
-7
-8
-10
-6
-7
-8
-10
-6
-7
-8
-10
-6
-7
-8
-10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
190
160
140
120
3
2
30
6
3
2
40
15
210
180
160
140
210
180
160
140
210
180
160
140
210
180
160
140
1
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC
2P
I
CC
2PS
I
CC
2N
I
CC
2NS
I
CC
3P
I
CC
3PS
I
CC
3N
I
CC
3NS
I
CC
4
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
CAS
latency = 3
CKE
≥
V
IH
(
MIN
)
CKE
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
CAS
latency = 2
I
CC
5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
CAS
latency = 3
CAS
latency = 2
I
CC
6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vcc and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
Self-Refresh Current
CKE
≤
0.2V
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| IS42S16100_08 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| IS42S16100-5BL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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