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參數(shù)資料
| 型號(hào)： | IS42S16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT)Synchronous DRAM(512K x 16 x 2組同步動(dòng)態(tài)RAM) |
| 中文描述： | 為512k字× 16位× 2銀行（16兆），同步DRAM（為512k × 16 × 2組同步動(dòng)態(tài)RAM）的 |
| 文件頁數(shù)： | 4/79頁 |
| 文件大?。?/td> | 656K |
| 代理商： | IS42S16100 |
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IS42S16100
ISSI
4
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
09/29/00
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
CC
MAX
V
CCQ
V
IN
V
OUT
P
D
MAX
I
CS
T
OPR
T
STG
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
–
1.0 to +4.6
–
1.0 to +4.6
–
1.0 to +4.6
–
1.0 to +4.6
1
50
0 to +70
–
55 to +150
V
V
V
V
W
mA
°
C
°
C
MAX
DC RECOMMENDED OPERATING CONDITIONS
(2)
(
At T
A
= 0 to +70
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
, V
CC
Q
V
IH
V
IL
Supply Voltage
Input High Voltage
(3)
Input Low Voltage
(4)
3.0
2.0
-0.3
3.3
—
—
3.6
V
V
V
V
DD
+ 0.3
+0.8
CAPACITANCE CHARACTERISTICS
(1,2)
(At T
A
= 0 to +25
°
C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
C
IN
1
C
IN
2
CI/O
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
—
—
—
4
4
5
pF
pF
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to GND.
3. V
IH
(max) = V
CCQ
+ 2.0V with a pulse width
≤
3 ns.
4. V
IL
(min) = GND
–
2.0V with a pulse < 3 ns and -1.5V with a pulse < 5ns.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16100_08 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-10T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| IS42S16100-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5BL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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