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參數(shù)資料
| 型號(hào)： | IS42S16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT)Synchronous DRAM(512K x 16 x 2組同步動(dòng)態(tài)RAM) |
| 中文描述： | 為512k字× 16位× 2銀行（16兆），同步DRAM（為512k × 16 × 2組同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 33/79頁(yè) |
| 文件大?。?/td> | 656K |
| 代理商： | IS42S16100 |
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IS42S16100
ISSI
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
09/29/00
33
Read Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42S16100 can output data continuously from the
burst start address (a) to location a+255 during a read
cycle in which the burst length is set to full page. The
IS42S16100 repeats the operation starting at the 256th
cycle with the data output returning to location (a) and
continuing with a+1, a+2, a+3, etc. A burst stop command
must be executed to terminate this cycle. A precharge
command must be executed within the ACT to PRE
command period (t
RAS
max.) following the burst stop
command.
CAS
Latency
3
2
t
RBD
3
2
After the period (t
RBD
) required for burst data output to stop
following the execution of the burst stop command has
elapsed, the outputs go to the HIGH impedance state.
This period (t
RBD
) is two clock cycle when the
CAS
latency
is two and three clock cycle when the
CAS
latency is three.
BST
READ A0
COMMAND
I/O
CLK
t
RBD
READ (CA=A, BANK 0)
BURST STOP
HI-Z
D
OUT
A0
D
OUT
A0
D
OUT
A1
D
OUT
A2
COMMAND
I/O
CLK
t
RBD
READ A0
READ (CA=A, BANK 0)
BURST STOP
BST
HI-Z
D
OUT
A0
D
OUT
A0
D
OUT
A1
D
OUT
A2
D
OUT
A3
D
OUT
A3
CAS
latency = 2, burst length = full page
CAS
latency = 3, burst length = full page
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16128 | 128K Words x 16 Bits x 2 Banks (4-Mbit)Synchronous DRAM(128K x 16 x 2組同步動(dòng)態(tài)RAM) |
| IS42S16128-10T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-12T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-8T | Chassis Mount and Din Rail Filters RoHS Compliant: Yes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16100_08 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-10T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| IS42S16100-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5BL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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