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參數(shù)資料
| 型號： | IS42S16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT)Synchronous DRAM(512K x 16 x 2組同步動態(tài)RAM) |
| 中文描述： | 為512k字× 16位× 2銀行（16兆），同步DRAM（為512k × 16 × 2組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 27/79頁 |
| 文件大小： | 656K |
| 代理商： | IS42S16100 |
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IS42S16100
ISSI
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
09/29/00
27
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
DAL
) between the
last burst data input and the completion of the precharge
operation differs depending on the
CAS
latency setting.
The delay (t
DAL
) is t
RP
plus one CLK period. That is, the
precharge operation starts one clock period after the last
burst data input.
CAS
latency = 2, burst length = 4
CAS
latency = 3, burst length = 4
CAS
Latency
t
DAL
3
2
1CLK
+t
RP
1CLK
+t
RP
Therefore, the selected bank can be made active after a
delay of t
DAL
.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
t
RP
t
DAL
PRECHARGE START
I/O
WRITE A0
COMMAND
CLK
ACT 0
WRITE WITH AUTO-PRECHARGE
(BANK 0)
t
RP
t
DAL
PRECHARGE START
WRITE A0
COMMAND
I/O
CLK
D
IN
0
D
IN
1
D
IN
2
D
IN
3
ACT 0
WRITE WITH AUTO-PRECHARGE
(BANK 0)
D
IN
0
D
IN
1
D
IN
2
D
IN
3
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| IS42S16128 | 128K Words x 16 Bits x 2 Banks (4-Mbit)Synchronous DRAM(128K x 16 x 2組同步動態(tài)RAM) |
| IS42S16128-10T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-12T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-8T | Chassis Mount and Din Rail Filters RoHS Compliant: Yes |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16100_08 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-10T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| IS42S16100-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5BL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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