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參數(shù)資料
| 型號(hào)： | IS42S16100 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT)Synchronous DRAM(512K x 16 x 2組同步動(dòng)態(tài)RAM) |
| 中文描述： | 為512k字× 16位× 2銀行（16兆），同步DRAM（為512k × 16 × 2組同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 2/79頁(yè) |
| 文件大小： | 656K |
| 代理商： | IS42S16100 |
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IS42S16100
ISSI
2
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
09/29/00
PIN FUNCTIONS
Pin No.
Symbol
Type
Function (In Detail)
20 to 24
27 to 32
A0-A10
Input Pin
A0 to A10 are address inputs. A0-A10 are used as row address inputs during active
command input and A0-A7 as column address inputs during read or write command
input. A10 is also used to determine the precharge mode during other commands. If
A10 is LOW during precharge command, the bank selected by A11 is precharged,
but if A10 is HIGH, both banks will be precharged.
When A10 is HIGH in read or write command cycle, the precharge starts automati-
cally after the burst access.
These signals become part of the OP CODE during mode register set command
input.
A11 is the bank selection signal. When A11 is LOW, bank 0 is selected and when
high, bank 1 is selected. This signal becomes part of the OP CODE during mode
register set command input.
CAS
, in conjunction with the
RAS
and
WE
, forms the device command. See the
"Command Truth Table" item for details on device commands.
The CKE input determines whether the CLK input is enabled within the device.
When is CKE HIGH, the next rising edge of the CLK signal will be valid, and when
LOW, invalid. When CKE is LOW, the device will be in either the power-down mode,
the clock suspend mode, or the self refresh mode.
The CKE is an
asynchronous i
nput.
CLK is the master clock input for this device. Except for CKE, all inputs to this device
are acquired in synchronization with the rising edge of this pin.
The
CS
input determines whether command input is enabled within the device.
Command input is enabled when
CS
is LOW, and disabled with
CS
is HIGH. The
device remains in the previous state when
CS
is HIGH.
I/O0 to I/O15 are I/O pins. I/O through these pins can be controlled in byte units
using the LDQM and UDQM pins.
19
A11
Input Pin
16
CAS
Input Pin
34
CKE
Input Pin
35
CLK
Input Pin
18
CS
Input Pin
2, 3, 5, 6, 8, 9, 11
12, 39, 40, 42, 43,
45, 46, 48, 49
14, 36
I/O0 to
I/O15
I/O Pin
LDQM,
UDQM
Input Pin
LDQM and UDQM control the lower and upper bytes of the I/O buffers. In read
mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW,
the corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go
to the HIGH impedance state when LDQM/UDQM is HIGH. This function corre-
sponds to
OE
in conventional DRAMs. In write mode, LDQM and UDQM control the
input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is
enabled, and data can be written to the device. When LDQM or UDQM is HIGH,
input data is masked and cannot be written to the device.
RAS
, in conjunction with
CAS
and
WE
, forms the device command. See the
"Command Truth Table" item for details on device commands.
WE
, in conjunction with
RAS
and
CAS
, forms the device command. See the
"Command Truth Table" item for details on device commands.
V
CC
Q is the output buffer power supply.
V
CC
is the device internal power supply.
GNDQ is the output buffer ground.
GND is the device internal ground.
17
RAS
Input Pin
15
WE
Input Pin
7, 13, 38, 44
1, 25
4, 10, 41, 47
26, 50
V
CC
Q
V
CC
GNDQ
GND
Power Supply Pin
Power Supply Pin
Power Supply Pin
Power Supply Pin
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16100_08 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-10T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| IS42S16100-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5BL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100-5TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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