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參數(shù)資料
| 型號： | IBM041812PQKB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 64K X 18 BURST SRAM(64K X 18高性能可猝發(fā)同步CMOS靜態(tài)RAM) |
| 中文描述： | 64K的X 18爆的SRAM（64K的X 18高性能可猝發(fā)同步的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 218K |
| 代理商： | IBM041812PQKB |
IBM041812PQKB
64K X 18 BURST SRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 8 of 14
26H4672
SA14-4663-01
Revised 9/97
AC Test Loading
50
VL = 1.5 V
50
DQ
Fig. 1 Test Equivalent Load
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
15
45
30
75
105
picoFarads
-0.5
-1.0
60
90
n
The derating curve above is for a purely capacitive load on the output driver. For example, a
part specified at 8ns access time will behave as though it has an 8.5 ns access time if a 30
pF load with no DC component was attached to the output driver. The access times guaran-
teed in the datasheets are based on a 50 ohm terminated test load. For unterminated loads
the derating curve should be used. This curve is based on nominal process conditions with
worst case parameters V
CC
= 3.14 V, T
A
= 70
°
C.
30 pF
Output Capacitive Load Derating Curve
351
DQ
Fig. 2 Test Equivalent Load
5 pF
+ 3.3 V
317
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