
IBM041812PQKB
64K X 18 BURST SRAM
Preliminary
26H4672
SA14-4663-01
Revised 9/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 14
Write Enable Truth Table
WEa
WEb
Byte Written
Notes
H
H
Read All Bytes
L
L
Write All Bytes
L
H
Write Byte A (D
IN
0 - 8)
H
L
Write Byte B (D
IN
9 - 17)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Notes
Power Supply Voltage
V
DD
-0.5 to 4.6
V
1
Input Voltage
V
IN
-0.5 to 6.0
V
1
Output Voltage
V
OUT
-0.5 to V
DD
+0.5
V
1
Operating Temperature
T
OPR
0 to +70
°
C
1
Storage Temperature
T
STG
-55 to +125
°
C
1
Power Dissipation
P
D
2.0
W
1
Short Circuit Output Current
I
OUT
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions
(T
A
=0 to 70
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Units
Notes
Supply Voltage
V
DD
3.135
3.3
3.465
V
1, 4
Input High Voltage
V
IH
2.2
—
5.5
V
1, 2, 4
Input Low Voltage
V
IL
-0.3
—
0.8
V
1, 3, 4
Output Current
I
OUT
—
5
8
mA
4
1. All voltages referenced to V
SS
. All V
DD
and V
SS
pins must be connected.
2. V
IH
(Max)DC = 5.5 V, V
IH
(Max)AC = 6.0 V (pulse width
≤
4.0ns).
3. V
IL
(Min)DC = - 0.3 V, V
IL
(Min)AC= -1.5 V (pulse width
≤
4.0ns).
4. Input Voltage levels are tested to the following DC conditions: 1 microsecond cycle and 200 nanosecond set-up and hold times.
Capacitance
(T
A
=0 to +70
°
C, V
DD
=3.3V
±
5%, f=1MHz)
Parameter
Symbol
Test Condition
Max
Units
Notes
Input Capacitance
C
IN
V
IN
= 0V
5
pF
Data I/O Capacitance (DQ0-DQ17)
C
OUT
V
OUT
= 0V
5
pF