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| 型號(hào)： | IBM041812PQKB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 64K X 18 BURST SRAM(64K X 18高性能可猝發(fā)同步CMOS靜態(tài)RAM) |
| 中文描述： | 64K的X 18爆的SRAM（64K的X 18高性能可猝發(fā)同步的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | IBM041812PQKB |
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IBM041812PQKB
64K X 18 BURST SRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 6 of 14
26H4672
SA14-4663-01
Revised 9/97
DC Electrical Characteristics
(T
A
= 0 to +70
°
C, V
DD
=3.3V
±
5%)
Parameter
Symbol
Min.
Max.
Units
Notes
Operating Current
Average Power Supply Operating Current
(OE = V
IH
, I
OUT
= 0)
I
DD12
—
300
mA
2, 3
Standby Current
Power Supply Standby Current
(CS2 = V
or CS2 = V
or CS = V
All other inputs = V
IH
or V
IL
, I
OUT.
= 0 Clock @ 83MHz)
I
SB
—
25
mA
1, 3
Input Leakage Current
Input Leakage Current, any input
(V
IN
= 0 &V
DD
)
I
LI
—
+1
μ
A
4
Output Leakage Current
(V
OUT
=0 &V
DD
, OE = V
IH
)
I
LO
—
+1
μ
A
Output High Level
Output “H” Level Voltage (I
OH
=-8mA @ 2.4V)
V
OH
2.4
—
V
Output Low Level
Output “L” Level Voltage (I
OL
=+8mA @ 0.4V)
V
OL
—
0.4
V
1. I
SB
= Stand-by Current.
2. I
DD
= Selected Current.
3. I
OUT
= Chip Output Current.
4. The input leakage current for 5.5V input is 200
μ
A for Clk, Chip Selects, and Output Enable. Other inputs have 100
μ
A of leakage
current at 5.5V.
AC Test Conditions
(T
A
=0 to +70
°
C, V
DD
=3.3V
±
5%)
Parameter
Symbol
Conditions
Units
Notes
Input Pulse High Level
V
IH
3.0
V
Input Pulse Low Level
V
IL
0.0
V
Input Rise Time
T
R
2.0
ns
Input Fall Time
T
F
2.0
ns
Input and Output Timing Reference Level
1.5
V
Output Load Conditions
1
1. See AC Test Loading figure on page 8.
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