參數(shù)資料
型號: IBM041812PQKB
廠商: IBM Microeletronics
英文描述: 64K X 18 BURST SRAM(64K X 18高性能可猝發(fā)同步CMOS靜態(tài)RAM)
中文描述: 64K的X 18爆的SRAM(64K的X 18高性能可猝發(fā)同步的CMOS靜態(tài)RAM)的
文件頁數(shù): 12/14頁
文件大?。?/td> 218K
代理商: IBM041812PQKB
IBM041812PQKB
64K X 18 BURST SRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 12 of 14
26H4672
SA14-4663-01
Revised 9/97
The IBM041812PQK has the pins connected in the manner indicated in the Current Connections (x18) and is
also JEDEC complaint. Future Connections refers to the evolution on the JEDEC standard for subsequent
part numbers.
Connect Compatibility for 64K x18 and Future 64K x 16 & 64K x 18
TQFP PIN #
Current Connections (x18)
Future Connections (x16 & x18)
Function
4,27,54,77
NC
V
DDQ
Output Power Supply
5,26,55,76
NC
V
SS
Ground
14
NC
Low or High, NC for most vendors but
Low or High to comply to the JEDEC
standard.
FT, Flow thru or Pipeline function, tie
Low for flow thru, High for Pipeline
24
DQP2
NC or DQ in x18
Parity bit for second byte
31
NC
Low or High
LBO, Linear Burst Order, This pin must
be tied low for linear(PowerPC), High for
Interleave (Pentium)
64
NC
Low or High. Low allows normal opera-
tion.
ZZ, Asynchronous Sleep Mode, Tie to
ground for normal function, V
DDQ
for
sleep mode (Low power state)
74
DQP1
NC or DQ in x18
Parity bit for first byte
87
NC
Low or BWE, Tie low if function not usedbytes to be written.
88
NC
Low or GW, Tie High if function not usedbytes to occur with single pin.
相關(guān)PDF資料
PDF描述
IBM041813PPLB 64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝發(fā)流水線式線式高性能靜態(tài)RAM)
IBM041813PQKB 64K X 18 Burst Pipeline SRAM(1M(64K X 18)高性能同步可猝發(fā)管線式靜態(tài)RAM)
IBM041814PPLB 64K X 18 BURST SRAM(1M (64K X 18)同步可猝發(fā)高性能靜態(tài)RAM)
IBM041814PQKB 64K X 18 BURST SRAM(1M(64K X 18)高性能同步可猝發(fā)CMOS靜態(tài)RAM)
IBM0418A40QLAB 4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS靜態(tài)RAM)
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