參數(shù)資料
型號(hào)： 28F160C18
廠商： Intel Corp.
英文描述： 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 1.8高級(jí)啟動(dòng)塊閃存（1.8V的高級(jí)引導(dǎo)塊閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 8/52頁(yè)
文件大?。?/td> 272K
代理商： 28F160C18
28F160C18
E
8
ADVANCE INFORMATION
Table 2. 1.8 Volt Advanced+ Boot Block Pin Descriptions
Symbol
Type
Name and Function
A
0
–A
19
INPUT
ADDRESS INPUTS
for memory addresses. Addresses are internally
latched during a program or erase cycle.
16-Mbit x 16: A[0-19]
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Inputs commands to the
Command User Interface when CE# and WE# are active. Data is
internally latched. Outputs array, configuration and status register data.
The data pins float to tri-state when the chip is de-selected or the outputs
are disabled.
DQ
0
–DQ
7
INPUT/OUTPUT
DQ
8
–DQ
15
INPUT/OUTPUT
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Data is internally latched.
Outputs array and configuration data. The data pins float to tri-state when
the chip is de-selected.
CE#
INPUT
CHIP ENABLE:
Activates the internal control logic, input buffers,
decoders and sense amplifiers. CE# is active low. CE# high de-selects
the memory device and reduces power consumption to standby levels.
OE#
INPUT
OUTPUT ENABLE:
Enables the device’s outputs through the data
buffers during a read operation. OE# is active low.
WE#
INPUT
WRITE ENABLE:
Controls writes to the Command Register and
memory array. WE# is active low. Addresses and data are latched on
the rising edge of the second WE# pulse.
RST#
INPUT
RESET:
Uses two voltage levels (V
IL
, V
IH
) to control reset mode.
When RST# is at logic low, the device is in reset
which drives the
outputs to High-Z and resets the Write State Machine.
When RST# is at logic high, the device is in standard operation
.
When RST# transitions from logic-low to logic-high, the device resets all
blocks to locked and defaults to the read array mode.
WP#
INPUT
WRITE PROTECT:
Controls the lock-down function of the flexible
Locking feature
When WP# is a logic low, the lock-down mechanism is enabled
and
blocks marked lock-down cannot be unlocked through software.
When WP# is logic high, the lock-down mechanism is disabled
and
blocks previously locked-down are now locked and can be unlocked and
locked through software. After WP# goes low, any blocks previously
marked lock-down revert to that state.
See Section 3.3 for details on block locking.
V
CC
SUPPLY
DEVICE POWER SUPPLY:
[1.65 V–1.95 V] Supplies power for device
operations.
V
CCQ
INPUT
I/O POWER SUPPLY:
Supplies power for input/output buffers.
[1.65 V–1.95 V] This input should be tied directly to V
CC
.
相關(guān)PDF資料
PDF描述
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160S3 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
28F320S3 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器)
28F160S5 5 V FlashFile Memory(5 V FlashFile 存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F160C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
28F160C3BA90 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述:
28F160C3TD70 制造商: 功能描述: 制造商:undefined 功能描述:
28F160F3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
28F160F3B95 制造商:Intel 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*