參數(shù)資料
型號: 28F160C18
廠商: Intel Corp.
英文描述: 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器)
中文描述: 1.8高級啟動塊閃存(1.8V的高級引導(dǎo)塊閃速存儲器)
文件頁數(shù): 30/52頁
文件大?。?/td> 272K
代理商: 28F160C18
28F160C18
E
30
ADVANCE INFORMATION
4.5
AC Characteristics
—Read Operations
(1,4)
—Extended Temperature
Product
16 Mbit
Access Time (ns)
90
120
#
Symbol
Parameter
Note
Min
Max
Min
Max
Unit
R1
t
AVAV
Read Cycle Time
90
120
ns
R2
t
AVQV
Address to Output Delay
90
120
ns
R3
t
ELQV
CE# to Output Delay
2
90
120
ns
R4
t
GLQV
OE# to Output Delay
2
45
45
ns
R5
t
PHQV
RST# to Output Delay
150
150
ns
R6
t
ELQX
CE# to Output in Low Z
3
0
0
ns
R7
t
GLQX
OE# to Output in Low Z
3
0
0
ns
R8
t
EHQZ
CE# to Output in High Z
3
25
25
ns
R9
t
GHQZ
OE# to Output in High Z
3
25
25
ns
R10
t
OH
Output Hold from
Address, CE#, or OE#
Change, Whichever
Occurs First
3
0
0
ns
NOTES:
1.
2.
3.
4.
See Figure 7: AC Waveform: Read Operations
OE# may be delayed up to t
ELQV
–t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, but not 100% tested.
See Figure 5:
Input/Output Reference Waveform
for timing measurements and maximum allowable input slew rate.
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