參數(shù)資料
型號(hào)： 28F160C18
廠(chǎng)商： Intel Corp.
英文描述： 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 1.8高級(jí)啟動(dòng)塊閃存（1.8V的高級(jí)引導(dǎo)塊閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 22/52頁(yè)
文件大?。?/td> 272K
代理商： 28F160C18
28F160C18
E
22
ADVANCE INFORMATION
Attempts to address Protection Program commands
outside the defined protection register address
space should not be attempted. This space is
reserved for future use. Attempting to program to a
previously locked protection register segment will
result in a status register error (program error bit
SR.4 and lock error bit SR.1 will be set to 1).
3.4.3
LOCKING THE PROTECTION
REGISTER
The user-programmable segment of the protection
register is lockable by programming Bit 1 of the
PR-LOCK location to 0. Bit 0 of this location is
programmed to 0 at the Intel factory to protect the
unique device number. This bit is set using the
Protection Program command to program
“FFFD” to
the PR-LOCK location. After these bits have been
programmed, no further changes can be made to
the values stored in the protection register.
Protection Program commands to a locked section
will result in a status register error (Program Error
bit SR.4 and Lock Error bit SR.1 will be set to 1).
Protection register lockout state is not reversible.
4 Words
Factory Programmed
4 Words
User Programmed
PR Lock
88H
85H
84H
81H
80H
0645_05
Figure 3. Protection Register Memory Map
3.5
V
PP
Program and Erase
Voltages
Intel 1.8 Volt Advanced+ Boot Block products
provide in-system programming and erase in the
0.9 V–1.95 V
range.
programming, it also includes a low-cost, backward-
compatible 12 V programming feature.
For
fast
production
3.5.1
IMPROVED 12 VOLT PRODUCTION
PROGRAMMING
When V
PP
is between 0.9 V and 1.95 V, all program
and erase current is drawn through the V
CC
pin.
Note that if V
PP
is driven by a logic signal, V
IH
min =
0.9 V. That is, V
PP
must remain above 0.9 V to
perform in-system flash modifications. When V
PP
is
connected to a 12 V power supply, the device
draws program and erase current directly from the
V
PP
pin. This eliminates the need for an external
switching transistor to control the voltage V
PP
.
Figure 4 shows examples of how the flash power
supplies can be configured for various usage
models.
The 12 V V
PP
mode enhances programming
performance during the short period of time typically
found in manufacturing processes; however, it is
not intended for extended use. 12 V may be applied
to V
PP
during program and erase operations for a
maximum of 1000 cycles on the main blocks and
2500 cycles on the parameter blocks. V
PP
may be
connected to 12 V for a total of 80 hours maximum.
Stressing the device beyond these limits may cause
permanent damage.
3.5.2
V
≤
V
FOR COMPLETE
PROTECTION
In addition to the flexible block locking, the V
PP
programming voltage can be held low for absolute
hardware write protection of all blocks in the flash
device. When V
PP
is below V
PPLK
, any program or
erase operation will result in a error, prompting the
corresponding status register bit (SR.3) to be set.
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