參數(shù)資料
型號(hào): 28F160C18
廠商: Intel Corp.
英文描述: 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 1.8高級(jí)啟動(dòng)塊閃存(1.8V的高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
文件頁(yè)數(shù): 35/52頁(yè)
文件大小: 272K
代理商: 28F160C18
E
4.8
28F160C18
35
ADVANCE INFORMATION
Reset Operations
IH
V
IL
V
RP# (P)
PLPH
t
IH
V
IL
V
RP# (P)
PLPH
t
(A) Reset during Read Mode
Abort
Complete
PLRH
PHQV
PHWL
PHEL
t
t
t
PHQV
PHWL
PHEL
t
t
t
(B) Reset during Program or Block Erase, <
PLPH
PLRH
t
t
IH
V
IL
V
RP# (P)
PLPH
t
Abort
Complete
PHQV
PHWL
PHEL
t
t
t
PLRH
t
Deep
Power-
Down
(C) Reset Program or Block Erase, >
PLPH
PLRH
t
Figure 9. AC Waveform: Reset Operation
Table 11. Reset Specifications
(1)
V
CC
1.65 V
–1.95 V
Symbol
Parameter
Notes
Min
Max
Unit
t
PLPH
RST# Low to Reset during Read
(If RST# is tied to V
CC
, this specification is not
applicable)
2,4
100
ns
t
PLRH1
t
PLRH2
NOTES:
1.
2.
3.
4.
RST# Low to Reset during Block Erase
3,4
22
μs
RST# Low to Reset during Program
3,4
12
μs
See Section 3.1.4 for a full description of these conditions.
If t
PLPH
is < 100 ns the device may still reset but this is not guaranteed.
If RST# is asserted while a block erase or
word program operation is not executing, the reset will complete within 100 ns.
Sampled, but not 100% tested.
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