參數(shù)資料
型號: 28F160C18
廠商: Intel Corp.
英文描述: 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器)
中文描述: 1.8高級啟動塊閃存(1.8V的高級引導(dǎo)塊閃速存儲器)
文件頁數(shù): 26/52頁
文件大?。?/td> 272K
代理商: 28F160C18
28F160C18
E
26
ADVANCE INFORMATION
4.3
T
A =
25 °C, f
=
1 MHz
Capacitance
Sym
Parameter
Notes
Typ
Max
Units
Conditions
C
IN
Input Capacitance
1
6
8
pF
V
IN
=
0 V
C
OUT
Output Capacitance
1
10
12
pF
V
OUT
=
0 V
NOTE:
1.
Sampled, not 100% tested.
4.4
DC Characteristics
V
CC
1.65 V
–1.95 V
V
CCQ
1.65 V–1.95 V
Sym
Parameter
Note
Typ
Max
Unit
Test Conditions
I
LI
Input Load Current
1,7
±
1
μA
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
or GND
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
or GND
I
LO
Output Leakage Current
1,7
0.2
±
1
μA
I
CCS
V
CC
Standby Current
1
10
15
μA
V
CC
=
V
CC
Max
CE#
=
RST#
=
V
CCQ
RST# = WP#
=
V
CCQ
or GND
V
IN
=
V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
OE# = V
IH
, CE# = V
IL
f = 5 MHz, I
OUT
= 0 mA
Inputs = V
IL
or V
IH
V
PP
= V
PP1
Program in Progress
I
CCR
V
CC
Read Current
1,5,7
9
15
mA
I
CCW +
I
PPW
Program Current
1,4
30
55
mA
18
35
mA
V
PP
=
V
PP2
(12 V)
Program in Progress
V
PP
=
V
PP1
Erase in Progress
I
CCE +
I
PPE
Erase Current
1,4
30
45
mA
16
35
mA
V
PP
=
V
PP2
(12 V)
Erase in Progress
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