- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373427 > SMJ44C251B (Texas Instruments, Inc.) 262144 BY 4-BIT MULTIPORT VIDEO RAM PDF資料下載
參數(shù)資料
| 型號： | SMJ44C251B |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144 BY 4-BIT MULTIPORT VIDEO RAM |
| 中文描述： | 262144 4位多端口視頻內(nèi)存 |
| 文件頁數(shù)： | 8/53頁 |
| 文件大小： | 913K |
| 代理商： | SMJ44C251B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當(dāng)前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
SMJ44C251B
262144 BY 4-BIT
MULTIPORT VIDEO RAM
SGMS058A – MARCH 1995 – REVISED JUNE 1995
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
random-access operation
The random-access operation functions are summarized in Table 2 and described in the following sections.
Table 2. Random-Access-Operation Functions
FUNCTION
RAS FALL
CAS
FALL
ADDRESS
DQ0–DQ3
CAS
TRG
W
DSF
SE
DSF
RAS
CAS
RAS
CAS
W
CBR refresh
L
X
X
X
X
X
X
X
X
X
Load and use write mask,
Write data to DRAM
H
H
L
L
X
L
Row
Addr
Col
Addr
DQ
Mask
Valid
Data
Load and use write mask,
Block write to DRAM
H
H
L
L
X
H
Row
Addr
Blk Addr
A2–A8
DQ
Mask
Col
Mask
Persistent write-per-bit,
Write data to DRAM
H
H
L
H
X
L
Row
Addr
Col
Addr
X
Valid
Data
Persistent write-per-bit,
Block write to DRAM
H
H
L
H
X
H
Row
Addr
Blk Addr
A2–A8
X
Col
Mask
Normal DRAM read/write
(nonmasked)
H
H
H
L
X
L
Row
Addr
Col
Addr
X
Valid
Data
Block write to DRAM
(nonmasked)
H
H
H
L
X
H
Row
Addr
Blk Addr
A2–A8
X
Col
Mask
Load write mask
H
H
H
H
X
L
Refresh
Addr
X
X
DQ
Mask
Load color register
H
H
H
H
X
H
Refresh
Addr
X
X
Color
Data
Legend:
H = High
L = Low
X = Don’t care
In persistent write-per-bit function, W must be high during the refresh cycle.
DQ0–DQ3 are latched on the later of W or CAS falling edge.
Col Mask = H: Write to address/column location enabled
DQ Mask = H: Write to I/O enabled
enhanced page mode
Enhanced page-mode operation allows faster memory access by keeping the same row address while selecting
random column addresses. This mode eliminates the time required for row address setup-and-hold and
address multiplex. The maximum RAS low time and the CAS page cycle time used determine the number of
columns that can be accessed.
Unlike conventional page-mode operation, the enhanced page mode allows the SMJ44C251B to operate at a
higher data bandwidth. Data retrieval begins as soon as the column address is valid rather than when CAS
transitions low. A valid column address can be presented immediately after row-address hold time has been
satisfied, usually well in advance of the falling edge of CAS. In this case, data can be obtained after t
a(C)
max
(access time from CAS low), if t
a(CA)
max (access time from column address) has been satisfied.
refresh
There are three types of refresh available on the SMJ44C251B: RAS-only refresh, CBR refresh, and hidden
refresh.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMJ4C1024-10HJ | 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| SMJ4C1024-10HK | 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| SMJ4C1024-10HL | 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| SMJ4C1024-10JD | 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| SMJ4C1024-10SV | 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMJ44C251B10HJM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B-10HJM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B10HMM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B-10HMM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B10JDM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。