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| 型號： | SMJ44C251B |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144 BY 4-BIT MULTIPORT VIDEO RAM |
| 中文描述： | 262144 4位多端口視頻內(nèi)存 |
| 文件頁數(shù)： | 43/53頁 |
| 文件大?。?/td> | 913K |
| 代理商： | SMJ44C251B |
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SMJ44C251B
262144 BY 4-BIT
MULTIPORT VIDEO RAM
SGMS058A – MARCH 1995 – REVISED JUNE 1995
43
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
CAS
DSF
TRG
W
SC
A0–A8
SE
Row
Tap Point
A0–A8
Don’t Care
SDQ0–SDQ3
H
L
Don’t Care
Old Data
Old Data
New Data
tc(TRD)
td(RLCL)
tw(RL)
td(RLCH)
tw(CL)
th(RLCA)
tsu(RA)
th(RA)
tsu(CA)
th(CLCA)
tsu(SFR)
tsu(TRG)
tsu(WMR)
th(RWM)
td(CLSH)
td(RLSH)
tw(SCH)
ta(SQ)
th(SHSQ)
tc(SC)
ta(SQ)
th(SHSQ)
tw(RH)
th(TRG)
DQ0–DQ3
Hi-Z
QSF
Tap Point bit A7
td(CHRL)
td(RLCA)
td(CARH)
tw(GH)
td(CASH)
td(SCTR)
tw(SCL)
tw(SCH)
td(GHQSF)
td(RLQSF)
td(CLQSF)
th(SFR)
NOTES: A. Early-load operation is defined as th(TRG) min
<
th(TRG)
<
td(RLTH) min.
B. DQ outputs remain in the high-impedance state for the entire memory-to-data-register transfer cycle. The memory-to-data-register
transfer cycle is used to load the data registers in parallel from the memory array. The 512 locations in each data register are written
from the 512 corresponding columns of the selected row. The data that is transferred into the data registers can be either shifted
out or transferred back into another row.
C. Once data is transferred into the data registers, the SAM is in the serial-read mode (i.e., SQ is enabled), allowing data to be shifted
out of the registers. Also, the first bit to be read from the data register after TRG has gone high must be activated by a positive
transition of SC.
Figure 31. Memory-to-Data-Register Transfer-Cycle Timing, Early-Load Operation
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| SMJ4C1024-10HL | 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMJ44C251B10HJM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B-10HJM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B10HMM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B-10HMM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
| SMJ44C251B10JDM | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM |
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